A Quantitative Theory of 1/fType Noise Due to Interface States in Thermally Oxidized Silicon
- 1 November 1967
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 46 (9), 2019-2033
- https://doi.org/10.1002/j.1538-7305.1967.tb04241.x
Abstract
A quantitative theory of 1/f type noise is derived from the distribution of trapping times for charges in interface states. The distribution of trapping times has been recently explained quantitatively by means of a random distribution of surface pot...Keywords
This publication has 7 references indexed in Scilit:
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