FREQUENCY DEPENDENCE OF THE IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURES
- 15 January 1966
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 8 (2), 48-50
- https://doi.org/10.1063/1.1754476
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- MOS CONDUCTANCE TECHNIQUE FOR MEASURING SURFACE STATE PARAMETERSApplied Physics Letters, 1965
- Physical limitations on the frequency response of a semiconductor surface inversion layerSolid-State Electronics, 1965
- Lateral AC current flow model for metal-insulator-semiconductor capacitorsIEEE Transactions on Electron Devices, 1965
- Impedance of semiconductor-insulator-metal capacitorsSolid-State Electronics, 1964
- Frequency response of the surface inversion layer in siliconProceedings of the IEEE, 1964
- Field Effect‐Capacitance Analysis of Surface States on SiliconPhysica Status Solidi (b), 1963
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952