Diamond-anvil uniaxial stress cell

Abstract

A diamond‐anvil cell, normally used for generating high hydrostatic pressure, serves as an excellent uniaxial stress cell. We demonstrate this by using a standard cell to apply up to 6 kbar uniaxial stress, nearly twice the stress previously reported in the literature, to semiconductor laser diodes. Contacting to the laser devices between the diamond anvils is shown to be feasible for various laser structures and orientations. The experimental apparatus to apply force to the diamond anvils is described. Examples are given showing the application of uniaxial stress, in both the (001) and (110) crystallographic directions, to oxide‐defined broad area stripe laser and ridge wave guide laser devices. The results suggest that a diamond anvil cell specifically designed for the low forces required for uniaxial stress generation would be a valuable instrument.