Effect of Oxide Layers on the Diffusion of Phosphorus into Silicon
- 1 February 1960
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 31 (2), 334-337
- https://doi.org/10.1063/1.1735568
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Stabilization of Silicon Surfaces by Thermally Grown Oxides*Bell System Technical Journal, 1959
- Measurement of Sheet Resistivities with the Four-Point ProbeBell System Technical Journal, 1958
- Evaluation of the Surface Concentration of Diffused Layers in SiliconBell System Technical Journal, 1958
- Surface Protection and Selective Masking during Diffusion in SiliconJournal of the Electrochemical Society, 1957
- Diffusion of Donor and Acceptor Elements in SiliconJournal of Applied Physics, 1956