Transparent oxide optoelectronics
Top Cited Papers
Open Access
- 12 May 2004
- journal article
- Published by Elsevier in Materials Today
- Vol. 7 (6), 42-51
- https://doi.org/10.1016/s1369-7021(04)00288-3
Abstract
No abstract availableKeywords
This publication has 62 references indexed in Scilit:
- Third-order optical nonlinearity originating from room-temperature exciton in layered compounds LaCuOS and LaCuOSeApplied Physics Letters, 2004
- Intrinsic excitonic photoluminescence and band-gap engineering of wide-gap p-type oxychalcogenide epitaxial films of LnCuOCh (Ln=La, Pr, and Nd; Ch=S or Se) semiconductor alloysJournal of Applied Physics, 2003
- Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnOApplied Physics Letters, 2003
- Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopantApplied Physics Letters, 2003
- ZnO-based transparent thin-film transistorsApplied Physics Letters, 2003
- Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOSApplied Physics Letters, 2002
- ZnRh 2 O 4 : A p-type semiconducting oxide with a valence band composed of a low spin state of Rh3+ in a 4d6 configurationApplied Physics Letters, 2002
- ZnO diode fabricated by excimer-laser dopingApplied Physics Letters, 2000
- Optically pumped lasing of ZnO at room temperatureApplied Physics Letters, 1997
- A ferroelectric transparent thin-film transistorApplied Physics Letters, 1996