High-field transport in wide-band-gap semiconductors
- 15 September 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 12 (6), 2361-2369
- https://doi.org/10.1103/physrevb.12.2361
Abstract
The drift velocity in high electric fields is calculated for several wide-band-gap semiconductors. Saturated velocities above cm/sec are found for several and SiC, diamond, and GaN hold promise for values above 2× cm/sec.
Keywords
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