SILICON (111)−7 STRUCTURE OBTAINED BY CLEAVAGE AT ROOM TEMPERATURE
- 1 August 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (3), 130-131
- https://doi.org/10.1063/1.1653334
Abstract
It has been found that the Si (111)−7 structure can be observed within a few seconds of cleavage at room temperature. High‐temperature heat treatment of the surface, previously thought to be essential to produce the structure, is not required. Auger spectra of both the (7×7) and (2×1) structures obtainable on room‐temperature cleavage are identical. To obtain the ``cold'' (7×7) structure, the crystals have been annealed at some period (up to several days) prior to cleavage. The cleavage must be characterized by minimal pressure rise and only minor fracture marks. If impurities are at all involved in the (7×7) structure, these results show that the only ones required are those inherently in the cleavage surface.Keywords
This publication has 8 references indexed in Scilit:
- Correlation of LEED surface structures and surface tear marks on cleaved Si surfacesSurface Science, 1969
- SILICON (111) 7×7 STRUCTUREApplied Physics Letters, 1969
- On the Structure of Annealed Si SurfacesPhysica Status Solidi (b), 1969
- SILICON SURFACE STRUCTUREApplied Physics Letters, 1968
- On the nature of annealed semiconductor surfacesPhysics Letters A, 1968
- PREPARATION OF ATOMICALLY CLEAN SURFACES OF Si AND Ge BY HEATING IN VACUUMApplied Physics Letters, 1965
- Structural Properties of Cleaved Silicon and Germanium SurfacesJournal of Applied Physics, 1963
- Structure and Adsorption Characteristics of Clean Surfaces of Germanium and SiliconThe Journal of Chemical Physics, 1959