The Ga+In+P system
- 31 May 1970
- journal article
- Published by Elsevier in The Journal of Chemical Thermodynamics
- Vol. 2 (3), 319-331
- https://doi.org/10.1016/0021-9614(70)90002-9
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- A low-threshold room-temperature injection laserIEEE Journal of Quantum Electronics, 1969
- A technique for the preparation of low-threshold room-temperature GaAs laser diode structuresIEEE Journal of Quantum Electronics, 1969
- Ga-Al-As: Phase, thermodynamic and optical propertiesJournal of Physics and Chemistry of Solids, 1969
- BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN THE In1−xGaxP ALLOYSApplied Physics Letters, 1968
- EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1-xAlxAs p-n JUNCTIONS GROWN BY LIQUID-PHASE EPITAXYApplied Physics Letters, 1967
- Phase equilibria in the GaAs and the GaP systemsJournal of Physics and Chemistry of Solids, 1965