Electron Mobilities and Tunneling Currents in Silicon
- 1 January 1961
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 32 (1), 131-132
- https://doi.org/10.1063/1.1735949
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Internal Field Emission at Narrow Silicon and GermaniumJunctionsPhysical Review B, 1960
- Tunneling Probability in Germanium p–n JunctionsJournal of the Physics Society Japan, 1960
- A new device using the tunneling process in narrow p-n junctionsSolid-State Electronics, 1960
- Direct Observation of Phonons During Tunneling in Narrow Junction DiodesPhysical Review Letters, 1959
- Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and PhosphorusPhysical Review B, 1949