Light emission in AlGaAs/GaAs HEMTs and GaAs MESFETs induced by hot carriers
- 1 November 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (11), 487-489
- https://doi.org/10.1109/55.63009
Abstract
Light emission in submicrometer gate AlGaAs/GaAs HEMTs and GaAs MESFETs has been observed at high drain bias values (>4.0 V). The spectral distribution of the emitted photons in the 1.7-2.9-eV range does not correspond to a simple Maxwellian distribution function of the electron energies in the channel. Light emission is observed in correspondence with nonnegligible gate and substrate hole currents, due to the collection of holes generated by impact ionization.Keywords
This publication has 12 references indexed in Scilit:
- Impact ionization in GaAs MESFETsIEEE Electron Device Letters, 1990
- Investigation into Molecular Beam Epitaxy-Grown FETs and HEMTsPublished by Springer Nature ,1990
- Electromagnetic radiation from hot carriers in FET-devicesSolid-State Electronics, 1989
- Hot-electron-induced photon energies in n-channel MOSFETs operating at 77 and 300 KIEEE Electron Device Letters, 1989
- Hot-carrier light emission from silicon metal-oxide-semiconductor devicesApplied Physics Letters, 1988
- Sidegating Effects in Inverted AlGaAs/GaAs HEMTJapanese Journal of Applied Physics, 1988
- Two-dimensional transient simulation of an idealized high electron mobility transistorIEEE Transactions on Electron Devices, 1985
- Hot-electron-induced photon and photocarrier generation in Silicon MOSFET'sIEEE Transactions on Electron Devices, 1984
- Hot Carriers in Microplasmas and their Radiation in Germanium and SiliconPhysica Status Solidi (b), 1964
- Theory of optical radiation from breakdown avalanches in germaniumJournal of Physics and Chemistry of Solids, 1960