Surface studies of epitaxial β-SiC on Si(100)
- 15 September 1984
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (6), 1636-1641
- https://doi.org/10.1063/1.334150
Abstract
The surface properties of β-SiC epitaxial layers on Si (100) have been studied. As-grown layers showed submonolayer coverage of both O and excess C, with the former bonded as SiO. Suitably cleaned surfaces were C terminated with no observable excess C, and gave SiC 1×1 low-energy electron diffraction patterns. A well-defined structure was observed in the SiLVV and CKLL Auger spectra of clean, ordered surfaces. This structure was apparently characteristic of SiC bonding and was absent for disordered surfaces.Keywords
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