Pulsed laser deposition of oriented PbZr.54Ti.46O3
- 1 April 1991
- journal article
- research article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 116 (1), 19-33
- https://doi.org/10.1080/00150199108007927
Abstract
We report the growth of oriented PbZrxTi1-xO3 (PZT) films, formed in situ by pulsed laser deposition onto heated substrates. The films were deposited from a pressed pellet of PbO - ZrO2 - PbTiO3 of composition PbZr.54Ti.46O3 using a KrF excimer laser (248 nm, ∽2 J/cm2, 5 hz). Typically, 300 to 1500-nm-thick films were deposited onto a heated substrate of MgO or SrTiO3. The deposition temperature was varied from RT to 750°C in ambient oxygen pressures between 10-6 and 0.3 Torr. Films were analyzed form structure (XRD), composition and thickness (EBS), and surface morphology (SEM). For substrate temperatures up to at least 250°C, an amorphous film was deposited. Isochronal annealing of such a film produced crystallization only after heating for 1 h at 550°C. In contrast, crystalline films were deposited at temperatures as low as 350°C, although <100gt; oriented PZT required at least 550°C. Films deposited beyond 600°C, or in too low an oxygen pressure were Pb deficient.Keywords
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