Disordered Regions in Semiconductors Bombarded by Fast Neutrons
- 1 August 1959
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 30 (8), 1214-1218
- https://doi.org/10.1063/1.1735295
Abstract
The width and depth of the potential wells surrounding disordered regions in neutronirradiatedn‐type germanium and extrinsic silicon are estimated. Numerical examples of well dimensions for a wide range of sample characteristics are presented. Some effects of disordered regions, e.g., (a) scattering of conduction electrons, (b) absorption of holes, and (c) polarizability, are discussed.Keywords
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