Machining Oxide Thin Films with an Atomic Force Microscope: Pattern and Object Formation on the Nanometer Scale
- 17 July 1992
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 257 (5068), 375-377
- https://doi.org/10.1126/science.257.5068.375
Abstract
An atomic force microscope (AFM) has been used to machine complex patterns and to form free structural objects in thin layers of MoO3 grown on the surface of MoS2. The AFM tip can pattern lines with ≤10-nanometer resolution and then image the resulting structure without perturbation by controlling the applied load. Distinct MoO3 structures can also be defined by AFM machining, and furthermore these objects can be manipulated on the MoS2 substrate surface with the AFM tip. These results suggest application to nanometer-scale diffraction gratings, high-resolution lithography masks, and possibly the assembly of nanostructures with novel properties.Keywords
This publication has 18 references indexed in Scilit:
- Dissociation of Individual Molecules with Electrons from the Tip of a Scanning Tunneling MicroscopeScience, 1992
- Science at the atomic scaleNature, 1992
- Layer-by-layer etching of two-dimensional metal chalcogenides with the atomic force microscopeJournal of the American Chemical Society, 1992
- Orientational Ordering of Polymers by Atomic Force Microscope Tip-Surface InteractionScience, 1992
- Microfabrication Techniques for Integrated Sensors and MicrosystemsScience, 1991
- The Man Who Dared to Think SmallPublished by American Association for the Advancement of Science (AAAS) ,1991
- Manipulation of Adsorbed Atoms and Creation of New Structures on Room-Temperature Surfaces with a Scanning Tunneling MicroscopeScience, 1991
- Lithographic studies of an e-beam resist in a vacuum scanning tunneling microscopeJournal of Vacuum Science & Technology A, 1990
- Positioning single atoms with a scanning tunnelling microscopeNature, 1990
- Scanning Tunneling Microscopy and Nanolithography on a Conducting Oxide, Rb 0.3 MoO 3Science, 1989