Photoluminescence from nanocrystallites embedded in hydrogenated amorphous silicon films prepared by plasma enhanced chemical vapor deposition
- 10 January 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (2), 220-222
- https://doi.org/10.1063/1.111510
Abstract
We report in this letter the observation of visible photoluminescence (PL) at room temperature from nanocrystallites embedded in hydrogenated amorphous silicon films, which are prepared in a plasma enhanced chemical vapor deposition system by using strong hydrogen-diluted silane as the reactant gas source, without any post-processing. The PL is attributed to the radiative recombination process of carriers in the nanocrystallites, and the quantum size effect is responsible for the emission above the band gap of bulk crystal Si. The critical deposition parameters of this type of film are identified.Keywords
This publication has 10 references indexed in Scilit:
- Visible Photoluminescence from Si Microcrystalline Particles*Japanese Journal of Applied Physics, 1993
- Visible photoluminescence from porous Si formed by annealing and chemically etching amorphous SiApplied Physics Letters, 1992
- Visible light emission at room temperature from anodized plasma-deposited silicon thin filmsApplied Physics Letters, 1992
- Rapid-thermal-oxidized porous Si−The superior photoluminescent SiApplied Physics Letters, 1992
- Demonstration of photoluminescence in nonanodized siliconApplied Physics Letters, 1992
- Some Perspectives on the Luminescence Mechanism Via Surface-Confined States of Porous SiMRS Proceedings, 1992
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Quantum size effects on photoluminescence in ultrafine Si particlesApplied Physics Letters, 1990
- Control of silicon network structure in plasma depositionJournal of Non-Crystalline Solids, 1989
- Effect of grain boundaries on the Raman spectra, optical absorption, and elastic light scattering in nanometer-sized crystalline siliconPhysical Review B, 1987