Compensation from implantation in GaAs

Abstract

Non‐dopant ions have been implanted at low doses ([inverted lazy s] 10¹⁰ cm⁻²) into GaAs to determine the extent of carrier removal and to pin‐point annealing stages for carrier recovery. A removal rate of around 200 carriers per ion is found for such lighter ions as B⁺, N⁺, and F⁺. At the 1‐MeV energy used, compensating damage extends along the ion track right from the GaAs wafer surface. Partial recovery of the carriers as well as mobility occurs at the well‐known 225 °C electron damage annealing stage. A further annealing stage is found at [inverted lazy s] 525 °C.