Low Temperature Silicon Epitaxy by Hot Wall Ultrahigh Vacuum/Low Pressure Chemical Vapor Deposition Techniques: Surface Optimization

Abstract

Fundamental equilibrium considerations derived from the system have been successfully employed in the design and operation of a novel low temperature epitaxial silicon process. Films have been deposited in the range, with all resulting material epitaxial. TEM studies showed the transition to high quality, low defect density material to occur between 750° and 800°C, and such films were found to be of high chemical purity as well. In addition, UHV/CVD is shown to be a high throughput multiwafer system, achieving good film uniformities in a high wafer packing density environment, attributable to operation in the low pressure limit of chemical kinetics.