Photoluminescence spectroscopy of ion-implanted 3C-SiC grown by chemical vapor deposition
- 1 March 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (5), 2011-2016
- https://doi.org/10.1063/1.337997
Abstract
Low‐temperature photoluminescence (PL) spectroscopy has been used to characterize as‐grown and ion‐implanted 3C‐SiC films grown by chemical vapor deposition on Si(100) substrates. The D1 and D2 defect PL bands reported previously in ion‐implanted Lely‐grown SiC were also observed in the as‐grown chemical vapor deposited films, and the effects of annealing (1300–1800 °C) on these PL bands as observed in as‐grown films and films implanted with B, Al, or P have been studied. As reported previously for Lely‐grown SiC, the spectral details of the defect PL bands and their annealing characteristics were found to be independent of the particular implanted‐ion species.Keywords
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