Low threshold laser operation at room temperature in GaAs/(Al,Ga)As structures grown directly on (100)Si
- 19 May 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (20), 1360-1361
- https://doi.org/10.1063/1.96909
Abstract
We report the room-temperature pulsed operation of GaAs/(Al,Ga)As double heterojunction laser structures grown directly on (100)Si. Current thresholds of as low as 170 mA in 10-μm-wide stripe lasers have been achieved at 280 K. Power output as high as 44 mW per facet was also obtained. Assuming no current spreading, the corresponding current threshold density is 6.9 kA/cm2. Slope efficiencies and T0 values of 0.18 W/A and 165 K, respectively, have also been obtained. These results are directly attributable to the reduction of dislocations by choosing growth conditions and step density on the surface.Keywords
This publication has 5 references indexed in Scilit:
- Dislocation reduction in epitaxial GaAs on Si(100)Applied Physics Letters, 1986
- Structural properties of GaAs on Si and Ge substratesJournal of Vacuum Science & Technology B, 1986
- Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Room-temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrateApplied Physics Letters, 1985
- AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrateApplied Physics Letters, 1984