Temperature dependence of InGaAsP double-heterostructure laser characteristics

1 January 1979

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 15 (21), 695-696
https://doi.org/10.1049/el:19790495

Abstract

We report the temperature dependence of threshold for InGaAsP d.h. lasers with wavelengths from 1.23 to 1.53 μm. Our results suggest that a recombination centre, rather than carrier leakage, is responsible for the temperature sensitivity of the thresholds.

Keywords

INGAASP DOUBLE HETEROSTRUCTURE LASER
TEMPERATURE DEPENDENCE
TEMPERATURE SENSITIVITY
RECOMBINATION CENTRE
THRESHOLDS

This publication has 1 reference indexed in Scilit:

HETEROJUNCTIONS
Published by Elsevier ,1978

Cited by 62 articles