Transmission electron microscopy observations of p–n junctions
- 16 August 1975
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 30 (2), 699-711
- https://doi.org/10.1002/pssa.2210300230
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Contrast Effects in the Out-of-Focus Images of a p-n JunctionPhysica Status Solidi (a), 1973
- Observation of p–n junction in transmission electron microscopy by out-of-focus techniquePhysica Status Solidi (a), 1973
- Low angle electron diffraction with the Elmiskop 101 electron microscopeJournal of Physics E: Scientific Instruments, 1973
- Silicon material problems in semiconductor device technologyMicroelectronics Reliability, 1970
- A New method for Investigating the Electric Field Regions of p‐n JunctionsPhysica Status Solidi (b), 1969
- Selected-area small-angle electron diffractionJournal of Materials Science, 1967
- Ionization Rates for Holes and Electrons in SiliconPhysical Review B, 1957