Effects of dislocations on photoluminescent properties in liquid phase epitaxial GaP
- 15 April 1975
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (8), 431-433
- https://doi.org/10.1063/1.88226
Abstract
Correlations between photoluminescent decay time and dislocation density were studied in undoped liquid phase epitaxial GaP. Dislocations strongly reduce the photoluminescent decay time, especially in samples in which nonradiative recombination times (τ0) due to shunt paths other than dislocations are long. Dislocations were found to correspond to photoluminescence dark spots whose diameter is correlated with τ0. A quantitative model is presented, which is in good qualitative agreement with the observed photoluminescent−decay−time−versus−dislocation−density relationships.Keywords
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