Self-Induced Deficiency State in Degenerate Semiconductors

Abstract

We have performed a self-consistent nonlinear calculation of the modifications of the contact potential due to the degenerate doping of the semiconductor. For sufficiently small $r_s (r_s<~1.5)$ the resulting potential is of sufficient strength to support a bound state. The implications of this for the validity of the use of linear-response theory near the surface is briefly considered.