Rankings
Publications
Search Publications
Cited-By Search
Sources
Publishers
Scholars
Scholars
Top Cited Scholars
Organizations
About
Login
Register
Home
Publications
Anomalous Residual Defects in Silicon after Annealing of Through-Oxide Phosphorus Implanted Samples
Home
Publications
Anomalous Residual Defects in Silicon after Annealing of Through-Oxide Phosphorus Implanted Samples
Anomalous Residual Defects in Silicon after Annealing of Through-Oxide Phosphorus Implanted Samples
NN
N. Natsuaki
N. Natsuaki
MT
M. Tamura
M. Tamura
MM
M. Miyao
M. Miyao
TT
T. Tokuyama
T. Tokuyama
Publisher Website
Google Scholar
Add to library
Cite
Download
Share
Download
Download
Download PDF
Download
1 January 1976
conference paper
Published by
Japan Society of Applied Physics
https://doi.org/10.7567/ssdm.1976.a-1-4
Abstract
1976 International Conference on Solid State Devices,Search for presentations
Keywords
ANNEALING
SOLID STATE
INTERNATIONAL CONFERENCE
STATE DEVICES
PHOSPHORUS IMPLANTED
RESIDUAL DEFECTS
IMPLANTED SAMPLES
OXIDE PHOSPHORUS
ANOMALOUS RESIDUAL
All Articles
Open Access
Cited by 1 article