Surface modifications and recombination processes at the n-CdTe/electrolyte interface
- 31 August 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 72 (1-2), 426-431
- https://doi.org/10.1016/0022-0248(85)90185-x
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Study of CdTe/aqueous electrolyte interface in the absence of a redox systemJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1984
- Photoelectrochemical etching of ZnSe and nonuniform charge flow in Schottky barriersPhysical Review B, 1984
- The Semiconductor‐Electrolyte Interface: Photocurrent and Related Parameters in Cadmium TellurideJournal of the Electrochemical Society, 1984
- Surface Charging Effects during Photoanodic Dissolution of n ‐ GaAs ElectrodesJournal of the Electrochemical Society, 1983
- Deliberate modification of the behavior of n-type cadmium telluride/electrolyte interfaces by surface etching. Removal of Fermi level pinningThe Journal of Physical Chemistry, 1981
- Electrolytic decomposition and photodecomposition of compound semiconductors in contact with electrolytesJournal of Vacuum Science and Technology, 1978
- Study of the surface barrier of the metal–n-CdTe contactPhysica Status Solidi (a), 1978
- Barrier heights on cadmium telluride schottky solar cellsRevue de Physique Appliquée, 1977