Selectively δ-doped AlxGa1−xAs/GaAs heterostructures with high two-dimensional electron-gas concentrations n2DEG≥1.5×1012 cm−2 for field-effect transistors
- 12 October 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (15), 1170-1172
- https://doi.org/10.1063/1.98722
Abstract
The δ‐doping concept is applied to selectively doped heterostructures in the AlxGa1−xAs/GaAs material system. High two‐dimensional electron‐gas concentrations ≥1.5×1012 cm−2 are obtained at T=300 K in such selectively δ‐doped heterostructures due to (i) size quantization in the AlxGa1−xAs and (ii) localization of donor impurities within one atomic monolayer. Shubnikov–de Haas measurements yield n2DEG =1.1×1012 cm−2 at 300 mK and at a spacer thickness of 25 Å. Selectively δ‐doped heterostructure transistors (SΔDHT’s) are fabricated and have excellent characteristics due to the enhanced electron‐gas concentrations achieved. A very high transconductance of gm ≂360 mS/mm at a gate length of 1.2 μm is obtained in depletion‐mode SΔDHT’s at T=300 K.Keywords
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