Structural properties of a-Si1−xNx:H films grown by plasma enhanced chemical vapour deposition by SiH4 + NH3 + H2 gas mixtures
- 1 October 1997
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 307 (1-2), 298-305
- https://doi.org/10.1016/s0040-6090(97)00272-1
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Hydrogenated amorphous silicon-nitrogen alloys, a-SiNx:Hy: a wide band gap material for optoelectronic devicesJournal of Applied Physics, 1996
- Bond densities and electronic structure of amorphous:HPhysical Review B, 1990
- Amorphous-SiC thin-film p-i-n light-emitting diode using amorphous-SiN hot-carrier tunneling injection layersIEEE Transactions on Electron Devices, 1989
- Possibility of finding reliable solid-state tight-binding parameters for the Si-N bond through quantum-chemistry calculationsPhysical Review B, 1989
- Electronic structure, defect states, and optical absorption of amorphous [0≤x/(1-x)≤2]Physical Review B, 1987
- Amorphous SiN:H dielectrics with low density of defectsApplied Physics Letters, 1986
- Bonds and Defects in Plasma-Deposited Silicon Nitride Using SiH4-NH3-Ar MixtureJapanese Journal of Applied Physics, 1986
- Amorphous silicon-silicon nitride thin-film transistorsApplied Physics Letters, 1981
- The preparation, characterization and applications of silicon nitride thin filmsThin Solid Films, 1980
- Amorphous-silicon field-effect device and possible applicationElectronics Letters, 1979