X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface
- 1 July 2004
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 235 (1-2), 21-25
- https://doi.org/10.1016/j.apsusc.2004.05.135
Abstract
No abstract availableKeywords
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