Spatially resolved photoluminescence characterization and optically induced degradation of In1−xGaxAsyP1−y DH laser material
- 15 December 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (12), 992-994
- https://doi.org/10.1063/1.90265
Abstract
We have observed growth‐ and processing‐related defects and optically induced degradation in In1−xGaxAsyP1−y double‐heterostructure material intended for 1.2–1.3‐μm laser diodes. Threshold for the degradation observed decreases with increasing layer thickness, suggesting a relation to strain arising from compositional variation during growth.Keywords
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