First demonstration of high-power GaInP/GaAs HBT MMIC power amplifier with 9.9 W output power at X-band
- 1 September 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 4 (9), 293-295
- https://doi.org/10.1109/75.311511
Abstract
We report for the first time the large-signal power performance of a MMIC amplifier based on GaInP/GaAs HBT's. A output power of 9.9 W and power-added efficiency of more than 30% are measured at X-band. These results compare favorably with those measured from AlGaAs/GaAs HBT's, demonstrating that GaInP/GaAs HBT's are suitable for microwave power applications.<>Keywords
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