Measurement of absorption coefficients of Ga0.47In0.53As over the wavelength range 1.0–1.7 μm

1 January 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (25-26), 1187-1189
https://doi.org/10.1049/el:19850839

Abstract

The absorption coefficient of p+-, p−-and n−-doped Ga0.47In0.53As layers, grown lattice-matched to InP, has been calculated over the wavelength range 1.0–1.7 μm from transmission and reflection measurements.

Keywords

TRANSMISSION
ABSORPTION COEFFICIENTS
GA0.47IN0.53AS LAYERS
WAVELENGTH 1 TO 1.7 MICRONS
III-V SEMICONDUCTOR
REFLECTION

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