This paper discusses the development of ion implantation techniques for the production of high efficiency n-on-p silicon solar cells. Although the process is still being optimized, ion-implanted cells are already competitive with diffusion produced cells, with air mass zero (AMO) efficiencies of 11 percent having been achieved. A high-current production machine capable of producing 10 000 cells/week has been constructed and is being applied to further cell development. The process has been applied to dendritic material with AMO efficiencies of > 9.3 percent having been achieved. Using an ion beam high-vacuum sputtering process, cells have been fabricated with 1 mil fused SiO2integral cover slips and AMO efficiencies of > 10 percent.