Band Structures of GaAs1−xPx and In1−xGaxP
- 1 June 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 45 (2), 679-683
- https://doi.org/10.1002/pssb.2220450233
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Applications of photoluminescence excitation spectroscopy to the study of indium gallium phosphide alloysJournal of Physics D: Applied Physics, 1970
- Electronic Structures of Semiconductor AlloysPhysical Review B, 1970
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. II. Ionization Potentials and Interband Transition EnergiesPhysical Review B, 1969
- Calculation of the Reflectivity, Modulated Reflectivity, and Band Structure of GaAs, GaP, ZnSe, and ZnSPhysical Review B, 1969
- Dielectric Classification of Crystal Structures, Ionization Potentials, and Band StructuresPhysical Review Letters, 1969
- Effect of Te and S Donor Levels on the Properties ofnear the Direct-Indirect TransitionPhysical Review B, 1968
- ENERGY-GAP VARIATION IN MIXED III–V ALLOYSCanadian Journal of Physics, 1967
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966
- Optical Properties of the Silver and Cuprous HalidesPhysical Review B, 1963
- Anomalous Variation of Band Gap with Composition in Zinc Sulfo- and Seleno-TelluridesPhysical Review B, 1957