Fe-doped semi-insulating samples of InP have been implanted at room temperature and liquid nitrogen temperature at 200 KV with phosphorous. A fluence of 5 × 1014/cm2 was sufficient to render the lattice amorphous as determined by Rutherford backscattering techniques. Successful reconstruction of the damaged lattice was achieved using a 400°C anneal for 24 h on samples implanted at liquid nitrogen temperatures.