Continuous operation over 10 000 h of GaAs/GaAlAs double-heterostructure laser without lattice mismatch compensation
- 1 August 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (3), 138-139
- https://doi.org/10.1063/1.88383
Abstract
By improving the crystal growth conditions, continuous operation over 10 000 h has been achieved with a conventional metallic stripe geometry double‐heterostructure laser without using additional Al to the GaAs active region or P to the adjacent GaAlAs layers, and this laser is still being operated.Keywords
This publication has 6 references indexed in Scilit:
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- Degradation of (Ga·Al)As double heterostructure diode lasersJournal of Crystal Growth, 1974
- Degradation of (Ga·Al)As double heterostructure diode lasersJournal of Crystal Growth, 1974
- Continuous Operation over 2500 h of Double Heterostructure Laser Diodes with Output Powers More Than 80 mWJapanese Journal of Applied Physics, 1974
- Threshold reduction by the addition of phosphorus to the ternary layers of double-heterostructure GaAs lasersApplied Physics Letters, 1974
- Continuous operation of GaAs–Ga1 − xAlxAs double-heterostructure lasers with 30 °C half-lives exceeding 1000 hApplied Physics Letters, 1973