Large‐Area Assembly of Densely Aligned Single‐Walled Carbon Nanotubes Using Solution Shearing and Their Application to Field‐Effect Transistors

Abstract

Dense alignment of single-walled carbon nanotubes over a large area is demonstrated using a novel solution-shearing technique. A density of 150–200 single-walled carbon nanotubes per micro­meter is achieved with a current density of 10.08 μA μm⁻¹ at V_DS = −1 V. The on-current density is improved by a factor of 45 over that of random-network single-walled carbon nanotubes.