Standardized terminology for oxide charges associated with thermally oxidized silicon
- 1 March 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (3), 606-608
- https://doi.org/10.1109/t-ed.1980.19908
Abstract
Standarized terminology for oxide charges associated with the thermally oxidized silicon system is presented. This terminology is recommended by a committee established by the Electronics Division of the Electrochemical Society and the IEEE Semiconductor Interface Specialists Conference. All engineers and scientists concerned with oxide charges in silicon semiconductor applications are urged to adopt this terminology.Keywords
This publication has 2 references indexed in Scilit:
- Electronic states at the silicon-silicon dioxide interfaceProgress in Surface Science, 1977
- The Current Understanding of Charges in the Thermally Oxidized Silicon StructureJournal of the Electrochemical Society, 1974