Physical methods used for the characterization of modes of epitaxial growth from the vapor phase
- 1 September 1978
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 44 (2), 197-222
- https://doi.org/10.1016/0022-0248(78)90195-1
Abstract
No abstract availableThis publication has 45 references indexed in Scilit:
- Growth Mode Discrimination of Thin Films by Auger Electron SpectroscopyJapanese Journal of Applied Physics, 1974
- A model for the Auger electron spectroscopy of systems exhibiting layer growth, and its application to the deposition of silver on nickelSurface Science, 1973
- Recent advances in epitaxyThin Solid Films, 1972
- Quantitative Auger electron spectroscopy and electron rangesSurface Science, 1972
- Structure of epitaxial crystal interfacesSurface Science, 1972
- In situ observation of formation of misfit dislocations in pseudomorphic monolayer overgrowth of metals and non-metalsJournal of Crystal Growth, 1971
- Auger Electron Spectroscopy of fcc Metal SurfacesJournal of Applied Physics, 1968
- The climb and glide of misfit dislocationsPhilosophical Magazine, 1963
- The observation of dislocations to accommodate the misfit between crystals with different lattice parametersPhilosophical Magazine, 1961
- Phänomenologische Theorie der Kristallabscheidung an Oberflächen. IZeitschrift für Kristallographie, 1958