Production and Properties of Thin Layers of Indium Antimonide
- 1 June 1960
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 31 (6), 991-994
- https://doi.org/10.1063/1.1735789
Abstract
A new method of producing thin layers of indium antimonide is described. This consists of suddenly squashing a drop of molten indium antimonide between two optical flats and allowing it to cool. Large area, self‐supporting specimens of 10‐μ thickness have been prepared in this way and their properties examined. Although these layers are polycrystalline, their electrical and optical properties are in good agreement with the single‐crystal materials from which they were obtained.Keywords
This publication has 4 references indexed in Scilit:
- Properties of p-type Indium Antimonide: I. Electrical PropertiesProceedings of the Physical Society, 1958
- Infrared Reflectance of Evaporated Metal Films*Journal of the Optical Society of America, 1958
- Absorption and Dispersion of Indium AntimonideProceedings of the Physical Society. Section B, 1957
- Filmed Surfaces for Reflecting Optics*Journal of the Optical Society of America, 1955