Dependence of thermal stability of the titanium silicide/silicon structure on impurities
- 19 February 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (8), 725-727
- https://doi.org/10.1063/1.103314
Abstract
The effect of impurity on the thermal stability of titanium silicide (TiSi2)/single-crystal silicon (Si) structures has been studied. It is found that nitrogen and oxygen in the TiSi2 film significantly influence the morphological changes of a TiSi2/Si structure during high-temperature annealing at 1100 °C for 2–20 s. Nitrogen impurity improves the thermal stability of the TiSi2/Si structure, whereas oxygen degrades it.Keywords
This publication has 7 references indexed in Scilit:
- Interfacial reaction-induced morphological instabilities in thin Al/Pt and Al/Pd filmsJournal of Materials Research, 1987
- High Temperature Process Limitation on TiSi2Journal of the Electrochemical Society, 1986
- Thermal stability of TiSi2 on mono- and polycrystalline siliconJournal of Applied Physics, 1986
- Morphological degradation of TiSi2 on 〈100〉 siliconApplied Physics Letters, 1986
- Dopant redistribution during titanium silicide formationJournal of Applied Physics, 1986
- Phase equilibria in thin-film metallizationsJournal of Vacuum Science & Technology B, 1984
- Theory of Thermal GroovingJournal of Applied Physics, 1957