Negative Resistance and Impact Ionization Impurities in-Type Indium Antimonide
- 17 February 1964
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 133 (4A), A1134-A1137
- https://doi.org/10.1103/physrev.133.a1134
Abstract
-type indium antimonide crystals at liquid-helium temperatures placed in magnetic fields of a few kilogauss have yielded negative resistance characteristics. The negative resistance is attributed to impact ionization of impurities. In addition, delay and rise times for the current have been studied, and an explanation in terms of the rate equation for ionization and recombination is given.
Keywords
This publication has 3 references indexed in Scilit:
- Galvanomagnetic effects in n-InSb at low temperatures in strong magnetic fieldsJournal of Physics and Chemistry of Solids, 1959
- Magnetically induced impurity banding in n-InSbJournal of Physics and Chemistry of Solids, 1958
- Hydrogen atom in a strong magnetic fieldJournal of Physics and Chemistry of Solids, 1956