Preferential precipitation on dislocation loops in Te-doped gallium arsenide
- 1 July 1978
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 38 (1), 15-23
- https://doi.org/10.1080/01418617808239214
Abstract
Heat-treated tellurium-doped gallium arsenide contains prismatic and faulted dislocation loops with precipitate particles lying on the dislocation core. The position of the precipitates on the loops has been studied revealing preferential precipitation on 〈110〉 line segments for both faulted and prismatic loops. From a consideration of the atomic arrangements at the dislocation cores it is concluded that the precipitates preferentially decorate the prismatic loops where the dislocation core is identical to either a βss or αgs Lomer dislocation. Precipitates on the {111} faulted loops, however, can appear on all possible 〈110〉 dislocation segments. The faulted loops are thought to consist of a layer of gallium telluride, and, since this is a defect lattice containing gallium vacancies, β type dislocation core structures can occur along all six 〈110〉 directions. By analogy with the faulted loops, preferential precipitation on prismatic loops is believed to occur on βss Lomer dislocations.Keywords
This publication has 8 references indexed in Scilit:
- The nature of defects inn+ gallium arsenidePhilosophical Magazine, 1974
- Dislocation Velocity in Indium AntimonideJournal of the Physics Society Japan, 1968
- Defects in the sphalerite structureJournal of Physics and Chemistry of Solids, 1962
- Anisotropic plastic deformation of indium antimonidePhilosophical Magazine, 1962
- Characteristics of the {111} Surfaces of the III–V Intermetallic CompoundsJournal of the Electrochemical Society, 1960
- Dislocations in the diamond latticeJournal of Physics and Chemistry of Solids, 1958
- On the Plasticity of Germanium and Indium AntimonideActa Metallurgica, 1957
- A dislocation reaction in the face-centred cubic latticeJournal of Computers in Education, 1951