New electronic phenomena based on multilayer epitaxy

Abstract

New electronic phenomena have been demonstrated with structures that contain multiple layers of different semiconductor materials. Many of these phenomena are based on quantum confinement and tunnelling of carriers. The development of the molecular-beam epitaxy and metal-organic chemical vapor deposition techniques have made preparation of these structures possible. The new phenomena include quantum well injection lasers, modulation-doped heterostructures for FET's, and fractional quantization of the Hall effect.