Photoluminescence measurements of band discontinuity in InP-InGaPAs heterostructures
- 15 April 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (8), 755-757
- https://doi.org/10.1063/1.95497
Abstract
Photoluminescence data on liquid phase epitaxial single-well quantum well heterostructures are presented that permit the determination of the valence-band discontinuity ΔEv in InP-In1−xGaxP1−yAsy heterostructures at several quaternary compositions matched to InP [x≊0.453y(1+0.031y)]. The ΔEv determination, which depends on a hot-electron to bound-hole recombination transition, indicates that ΔEv ≊0.35ΔEg and ΔEc ≊0.65ΔEg for all InGaAsP compositions lattice matched to InP.Keywords
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