Electrical Properties of Hydrogen Adsorbed on Silicon
- 1 April 1959
- journal article
- research article
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 30 (4), 927-930
- https://doi.org/10.1063/1.1730127
Abstract
The photoemission from a silicon surface has been studied as a function of the number of hydrogen atoms adsorbed on it. The electric dipole moment of an adsorbed H atom is found to be 0.15×10—18 esu approximately.Keywords
This publication has 4 references indexed in Scilit:
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- Drift Mobilities in Semiconductors. II. SiliconPhysical Review B, 1954
- The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various TemperaturesPhysical Review B, 1931
- A CHEMICALLY ACTIVE MODIFICATION OF HYDROGEN.5Journal of the American Chemical Society, 1912