Abstract
Thin bismuth films were prepared on crystal surfaces by evaporation And the liquid state of the films at temperatures above and below the ordinary melting point (271°C) has been studied by means of the reflexion method of electron diffraction. The marked supercooling of the films (M. Takagi: J. Phys. Soc. Japan 9 (1954) 359) has been utilized for the study below the melting point. A method to eliminate difficulties inherent to the intensity measurement by reflexion method and a method to refine the observed intensity values were developed. The radial distribution curves at 400°C, 271°C (the melting point), 175°C, 130°C and 110°C (a little above the solidification temperature) were computed from experimental data. The curves showed a systematic change with temperature. It was revealed that the atomic arrangement at 110°C resembles closely that of solid bismuth. Above the melting point a tendency towards close-packed structure was noted.