Two-wavelength demultiplexing p-i-n GaAs/AlAs photodetector using partially disordered multiple quantum well structures
- 28 August 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (9), 828-829
- https://doi.org/10.1063/1.101772
Abstract
A novel two‐wavelength p‐i‐n demultiplexer is proposed and fabricated using dopant‐free partial disordering of GaAs/AlAs quantum wells by rapid thermal annealing. A crosstalk attenuation of 41 dB and an interchannel spacing of 69 nm were achieved in the 0.8 μm wavelength region.Keywords
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