Hybrid Fin-Line Matching Structures
- 1 December 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 30 (12), 2132-2139
- https://doi.org/10.1109/tmtt.1982.1131396
Abstract
Two transitions between unilateral and bilateral fin-line mounted back to back show unique features for impedance transformation. The series reactance of the equivalent T-circuit are theoretically shown to be capacitive. This is exploited by designing a broad-band switch with two p-i-n diodes. Its isolation is about 20 dB throughout the Ku-band.Keywords
This publication has 4 references indexed in Scilit:
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