Exciton localisation at impurity pairs in zinc telluride and indium phosphide
- 31 December 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (11-12), 1351-1355
- https://doi.org/10.1016/0038-1101(78)90206-x
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Band parameters for zinc telluride from bound exciton and donor-acceptor pair excitation luminescenceJournal of Physics C: Solid State Physics, 1978
- The nature of the predominant acceptors in high quality zinc tellurideJournal of Luminescence, 1978
- Optical investigations of the undulation spectrum of GaP:N:ZnPhysical Review B, 1976
- Piezospectroscopic and magneto-optical study of the Sn-acceptor in GaAsPhysical Review B, 1976
- Exciton Energy Transfer in GaP: NPhysical Review Letters, 1975
- On the origin of bound exciton lines in indium phosphide and gallium arsenideJournal of Physics C: Solid State Physics, 1974
- The Zeeman effect in the spectrum of excitons bound to isoelectronic bismuth in indium phosphideJournal of Physics C: Solid State Physics, 1974
- Rotational Levels of Shallow Acceptor States: The Undulation Spectra of N in GaPPhysical Review Letters, 1972
- Undulation Spectra of GaP Associated with the Isoelectronic Trap NPhysical Review Letters, 1971
- Pair Spectra and "Edge" Emission in Gallium PhosphidePhysical Review B, 1964