Electron-Electron Scattering in Nondegenerate Semiconductors: Driving the Anisotropic Distribution toward a Displaced Maxwellian
- 25 August 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 57 (8), 1084-1087
- https://doi.org/10.1103/physrevlett.57.1084
Abstract
The Boltzmann equation allows a study of the effect of electron-electron scattering on the anisotropy of the electron distribution in a large electric field. An effective electron-electron scattering rate relates how the quadrupole moment of the distribution in velocity space relaxes, lower moments being preserved by electron-electron scattering. We report (1) calculated distribution functions and (2) the density and drift-velocity dependence of for realistic electron-electron scattering.
Keywords
This publication has 9 references indexed in Scilit:
- Analytic Boltzmann equation approach for negative differential mobility in two-valley semiconductorsApplied Physics Letters, 1986
- Energy-Loss Rates for Hot Electrons and Holes in GaAs Quantum WellsPhysical Review Letters, 1985
- Ballistic electrons in an inhomogeneous submicron structure: Thermal and contact effectsPhysical Review B, 1984
- Time-Resolved Photoluminescence of Two-Dimensional Hot Carriers in GaAs-AlGaAs HeterostructuresPhysical Review Letters, 1984
- The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materialsReviews of Modern Physics, 1983
- Influence of Inter-Carrier Scattering on Hot Electron Distribution Function in GaAsJournal of the Physics Society Japan, 1979
- Transmission and reflection coefficients of carriers at an abrupt GaAs-GaAlAs (100) interfacePhysical Review B, 1979
- Electron Mobility in Direct-Gap Polar SemiconductorsPhysical Review B, 1970
- Theory of the Gunn effectProceedings of the IEEE, 1964